Display device and method of manufacturing display device

ABSTRACT

A method of manufacturing a display device according to an embodiment of the present invention includes in order: forming a sacrificial layer in a predetermined position on a substrate; forming a base material containing resin on the substrate with the sacrificial layer therebetween; forming a display region including a plurality of pixels on the base material; irradiating the substrate with laser light from a side of the substrate on which the base material is not formed; and peeling the substrate from the base material. A region where the base material and the substrate are in contact with each other is present at least a part of an edge portion of the base material.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of and claims the benefit of priorityunder 35 U.S.C. § 120 from U.S. application Ser. No. 16/030,021 filedJul. 9, 2018, and claims the benefit of priority under 35 U.S.C. § 119from Japanese Application No. 2017-136972 filed Jul. 13, 2017, theentire contents of each of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

One or more embodiments of the present invention relate to a displaydevice and a method of manufacturing a display device.

2. Description of the Related Art

In a display device including a display region, such as an organicelectroluminescent (EL) display device or a liquid crystal displaydevice, the development of a flexible display in which a display panelcan be bent has recently progressed with use of a base material havingflexibility.

For example, as disclosed in JP 2011-187446 A, the base material havingflexibility is supported on a substrate (e.g., a glass substrate) in amanufacturing process of the display panel from the viewpoint ofhandleability or the like, and the base material is peeled from thesubstrate at any proper timing.

SUMMARY OF THE INVENTION

The substrate is peeled, for example, after the force of adhesionbetween the base material and the substrate is reduced by irradiationwith laser light. However, in a conveying process from the laser lightirradiation to the peeling of the substrate, a failure such as thefalling of the substrate may occur. Conveying the display panel in astate where the substrate is absent may cause the degradation (e.g.,damage to the display panel or the adherence of a foreign substancethereto) of the quality of the display panel to be obtained.

One or more embodiments of the present invention have been made in viewof the above, and an object thereof is to provide a method ofmanufacturing a display device in which the degradation of the qualityof a display panel is suppressed.

According to one aspect of the present invention, a method ofmanufacturing display device is provided. The method of manufacturing adisplay device includes in order: forming a sacrificial layer in apredetermined position on a substrate; forming a base materialcontaining resin on the substrate with the sacrificial layertherebetween; forming a display region including a plurality of pixelson the base material; irradiating the substrate with laser light from aside of the substrate on which the base material is not formed; andpeeling the substrate from the base material. A region where the basematerial and the substrate are in contact with each other is present atat least a part of an edge portion of the base material.

According to another aspect of the present invention, a display deviceis provided. The display device includes: a base material havingflexibility; and a plurality of pixels located on the base material. Amajor surface of the base material is a side opposite to a surface onwhich the plurality of pixels are formed, the major surface has a firstarea and a second area, a surface of the first area is rougher than thatof the second area.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view showing a schematic configuration of anorganic EL display device according to one embodiment of the invention.

FIG. 2 is a schematic plan view showing one example of a display panelof the organic EL display device shown in FIG. 1.

FIG. 3 is a diagram showing one example of a cross section along lineIII-III in FIG. 2.

FIG. 4A is a diagram for explaining a method of manufacturing an organicEL display device in a first embodiment of the invention.

FIG. 4B is a diagram for explaining the method of manufacturing theorganic EL display device in the first embodiment of the invention.

FIG. 4C is a diagram for explaining the method of manufacturing theorganic EL display device in the first embodiment of the invention.

FIG. 4D is a diagram for explaining the method of manufacturing theorganic EL display device in the first embodiment of the invention.

FIG. 5A is a plan view showing the forming region of a sacrificial layerin the first embodiment of the invention.

FIG. 5B is a diagram showing one example of a cross section along lineI-I in FIG. 5A after laser light irradiation.

FIG. 6 is a plan view showing the forming region of a sacrificial layerin a second embodiment of the invention.

FIG. 7 is a plan view showing the forming region of a sacrificial layerin a third embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of the invention will be described withreference to the drawings. The disclosure is illustrative only.Appropriate modifications that will readily occur to those skilled inthe art and fall within the spirit of the invention are of courseincluded in the scope of the invention. In the drawings, for moreclarity of description, the width, thickness, shape, and the like ofeach part maybe schematically represented, compared to those inpracticing aspects of the invention. However, they are illustrativeonly, and do not limit the interpretation of the invention. Moreover, inthe specification and the drawings, elements similar to those describedin relation to a previous drawing are denoted by the same referencenumerals and signs, and a detailed description may be appropriatelyomitted.

In the specification and the claims, when the term “on” is simply usedin expressing the form in which one structure is disposed on anotherstructure, the term “on” includes, unless otherwise noted, both the casewhere one structure is disposed directly on another structure so as tobe in contact therewith and the case where one structure is disposedabove another structure with still another structure therebetween.Moreover, when the term “below” is simply used, the term “below”includes, unless otherwise noted, both the case where one structure isdisposed directly below another structure so as to be in contacttherewith and the case where one structure is disposed below anotherstructure with still another structure therebetween.

FIG. 1 is a schematic view showing a schematic configuration of adisplay device according to one embodiment of the invention, showing anorganic EL display device as an example. An organic EL display device 2includes a pixel array section 4 that displays an image, and a drivesection that drives the pixel array section 4. The organic EL displaydevice 2 is a flexible display using a resin film as a base material,and a stacked structure of a thin film transistor (TFT), an organiclight emitting diode (OLED), and the like is formed on the base materialcomposed of the resin film. The schematic view shown in FIG. 1 is oneexample only, and the embodiment is not limited to this example.

In the pixel array section 4, OLEDs 6 and pixel circuits 8 are disposedin a matrix so as to correspond to pixels. The pixel circuit 8 includesa plurality of TFTs 10 and 12 and a capacitor 14.

The drive section includes a scanning line drive circuit 20, a videoline drive circuit 22, a drive power supply circuit 24, and a controller26. The drive section drives the pixel circuit 8 and controls emissionof the OLED 6.

The scanning line drive circuit 20 is connected to a scanning signalline 28 provided for each array of pixels in the horizontal direction (apixel row). The scanning line drive circuit 20 sequentially selects thescanning signal line 28 in response to a timing signal input from thecontroller 26, and applies a voltage for turning on the lighting TFT 10to the selected scanning signal line 28.

The video line drive circuit 22 is connected to a video signal line 30provided for each array of pixels in the vertical direction (a pixelcolumn). The video line drive circuit 22 receives a video signal fromthe controller 26, and outputs, in synchronization with the selection ofthe scanning signal line 28 by the scanning line drive circuit 20, avoltage in response to the video signal of the selected pixel row toeach of the video signal lines 30. The voltage is written to thecapacitor 14 via the lighting TFT 10 in the selected pixel row. Thedrive TFT 12 supplies a current in response to the written voltage tothe OLED 6, and thus the OLED 6 of the pixel corresponding to theselected scanning signal line 28 emits light.

The drive power supply circuit 24 is connected to a drive power supplyline 32 provided for each pixel column, and supplies a current to theOLED 6 via the drive power supply line 32 and the drive TFT 12 in theselected pixel row.

Here, a lower electrode of the OLED 6 is connected to the drive TFT 12.On the other hand, upper electrodes of the OLEDs 6 are composed of anelectrode common to the OLEDs 6 of all pixels. When the lower electrodeis configured as an anode, a high potential is input thereto and a lowpotential is input to the upper electrode that serves as a cathode. Whenthe lower electrode is configured as a cathode, a low potential is inputthereto and a high potential is input to the upper electrode that servesas an anode.

FIG. 2 is a schematic plan view showing one example of a display panelof the organic EL display device shown in FIG. 1. The pixel arraysection 4 shown in FIG. 1 is provided in a display region 42 of thedisplay panel 40, and the OLEDs 6 are arranged in the pixel arraysection 4 as described above. The upper electrode constituting the OLEDs6 is formed common to the pixels as described above, and covers theentire display region 42.

A component mounting region 46 is provided at one edge side of thedisplay panel 40 having a rectangular shape, and wiring line connectingto the display region 42 is disposed at the edge side. A driver IC 48constituting the drive section is mounted on the component mountingregion 46, and a flexible printed board (FPC) 50 is connected thereto.The FPC 50 is connected to the controller 26, the circuits 20, 22, and24, and the like, and an IC is mounted on the FPC 50.

FIG. 3 is a diagram showing one example of a cross section along lineIII-III in FIG. 2. The display panel 40 has, for example, a structure inwhich a circuit layer 74 including TFTs 72 formed therein, the OLEDs 6,a sealing layer 106 sealing the OLEDs 6, and the like are stacked on abase material 70 composed of a resin film and having flexibility.Examples of the resin constituting the base material 70 include, forexample, a polyimide-based resin. The base material 70 is formed by, forexample, depositing a resin film containing a resin material such aspolyimide by applying. A protective film 114 is stacked on the sealinglayer 106. Specifically, the protective film 114 in a sheet form or afilm form is bonded on the sealing layer 106 with an adhesion layertherebetween. In the embodiment, the pixel array section 4 is of atop-emission type, and light generated in the OLED 6 is emitted to theside (upward in FIG. 3) opposite to the base material 70 side. When acolor filter system is employed as a coloring system in the organic ELdisplay device 2, a color filter is disposed, for example, between thesealing layer 106 and the protective film 114, or on a counter substrate(not shown) side. White light generated by the OLED 6 transmits throughthe color filter, so that, for example, pixels emit red (R), green (G),and blue (B) lights.

The pixel circuit 8, the scanning signal line 28, the video signal line30, the drive power supply line 32, and the like, which are describedabove, are formed in the circuit layer 74 in the display region 42. Atleast a portion of the drive section can be formed as the circuit layer74 on the base material 70 in a region adjacent to the display region42. As described above, the driver IC 48 constituting the drive sectionand the FPC 50 can be connected to a wiring line 116 of the circuitlayer 74 in the component mounting region 46.

As shown in FIG. 3, an under layer 80 formed of an inorganic insulatingmaterial is disposed on the base material 70. As the inorganicinsulatingmaterial, for example, siliconnitride (SiN_(y)), silicon oxide(SiO_(x)), and a complex of SiN_(y) and SiO_(x) are used.

In the display region 42, a semiconductor region 82 serving as a channelsection and a source-drain section of the TFT 72 of a top-gate type isformed on the base material 70 with the under layer 80 between thesemiconductor region 82 and the base material 70. The semiconductorregion 82 is formed of, for example, polysilicon (p-Si). Thesemiconductor region 82 is formed by, for example, providing asemiconductor layer (p-Si film) on the base material 70, and patterningthe semiconductor layer to selectively leave an area serving as thecircuit layer 74.

A gate electrode 86 is disposed on the channel section of the TFT 72with a gate insulating film 84 therebetween. The gate insulating film 84is typically formed of TEOS. The gate electrode 86 is formed by, forexample, patterning a metal film formed by sputtering or the like. Aninterlayer insulating layer 88 is disposed on the gate electrode 86 soas to cover the gate electrode 86. The interlayer insulating layer 88 isformed of, for example, the above inorganic insulating material. Animpurity is introduced by ion implantation into the semiconductor region82 (p-Si) serving as the source-drain section of the TFT 72. Further, asource electrode 90 a and a drain electrode 90 b that are electricallyconnected to the source-drain section are formed, so that the TFT 72 isconfigured.

An interlayer insulating film 92 is disposed on the TFT 72. A wiring 94is disposed on the surface of the interlayer insulating film 92. Thewiring 94 is formed by, for example, patterning a metal film formed bysputtering or the like. For example, the scanning signal line 28, thevideo signal line 30, and the drive power supply line 32, which areshown in FIG. 1, and the wiring 116 can be formed to have a multilayerwiring structure using the metal film forming the wiring 94 and themetal film used for forming the gate electrode 86, the source electrode90 a, and the drain electrode 90 b. On this configuration, aplanarization film 96 and a passivation film 98 are formed. The OLED 6is formed on the passivation film 98 in the display region 42. Theplanarization film 96 is formed of, for example, a resin material. Thepassivation film 98 is formed of, for example, an inorganic insulatingmaterial such as SiN_(y).

The OLED 6 includes a lower electrode 100, an organic material layer102, and an upper electrode 104. Specifically, the organic materiallayer 102 includes a hole transport layer, a light emitting layer, andan electron transport layer. The OLED 6 is typically formed by stackingthe lower electrode 100, the organic material layer 102, and the upperelectrode 104 in this order from the base material 70 side. In theembodiment, the lower electrode 100 is an anode of the OLED 6, and theupper electrode 104 is a cathode thereof.

When the TFT 72 shown in FIG. 3 is the drive TFT 12 having an n-channel,the lower electrode 100 is connected to the source electrode 90 a of theTFT 72. Specifically, after the formation of the planarization film 96described above, a contact hole 110 for connecting the lower electrode100 to the TFT 72 is formed. And for example, by patterning a conductorportion formed on the surface of the planarization film 96 and insidethe contact hole 110, the lower electrode 100 connected to the TFT 72 isformed for each pixel. The lower electrode is formed of, for example, atransmitting conductive material such as indium tin oxide (ITO) orindium zinc oxide (IZO), or metal such as Ag or Al.

On this structure, a rib 112 separating the pixels is disposed. Forexample, after the formation of the lower electrode 100, the rib 112 isformed at the boundary between the pixels, and the organic materiallayer 102 and the upper electrode 104 are stacked in an effective region(a region where the lower electrode 100 is exposed) of the pixelsurrounded by the rib 112. The upper electrode 104 is formed of, forexample, an extremely thin alloy of Mg and Ag, or a transmittingconductive material such as ITO or IZO.

The sealing layer 106 is disposed on the upper electrode 104 so as tocover the entire display region 42. The sealing layer 106 has a stackedstructure including a first sealing film 161, a sealing planarizationfilm 160, and a second sealing film 162 in this order. The first sealingfilm 161 and the second sealing film 162 are formed of an inorganicmaterial (e.g., an inorganic insulating material). Specifically, thefirst sealing film 161 and the second sealing film 162 are formed bydepositing a SiN_(y) film by a chemical vapor deposition (CVD) method.The sealing planarization film 160 is formed using an organic material(e.g., a resin material such as a curable resin composition). On theother hand, the sealing layer 106 is not disposed in the componentmounting region 46.

For example, for ensuring the mechanical strength of the surface of thedisplay panel 40, the protective film 114 is stacked on the surface ofthe display region 42. On the other hand, the protective film 114 is notprovided in the component mounting region 46 for facilitating connectionof the IC or the FPC.

A method of manufacturing an organic EL display device in a firstembodiment of the invention will be described with reference to FIGS. 4Ato 4D and FIGS. 5A and 5B. In FIGS. 4A to 4D, the structures in FIG. 3are simply shown as a three-layer structure of the base material 70, anupper structure layer 108, and the protective film 114. In FIGS. 5A and5B, the upper structure layer 108 and the protective film 114 areomitted, and further, the base material 70 is omitted in FIG. 5A.

First, as shown in FIG. 4A, a sacrificial layer 120 having a desiredthickness (e.g., approximately 10 μm) is formed on a glass substrate 200(also referred to as “substrate” or “support substrate”). Thesacrificial layer 120 blocks a part of laser light to be describedlater. Specifically, as shown in FIG. 5A, the sacrificial layer 120 isformed in a region except for one edge side 200 a of the glass substrate200 having a rectangular shape on the component mounting region 46 sideand one edge side 200 b opposing the component mounting region 46. Inthe example shown in the drawing, the sacrificial layer 120 is formed ina region except for the entire lengths of the edge side 200 a and theedge side 200 b. However, for example, the sacrificial layer 120 may beformed at a part (parts) of the edge side 200 a and/or the edge side 200b. Here, it is preferable to continuously form the sacrificial layer 120in a region corresponding to the display region 42 and a frame region 44surrounding the display region 42. This is because if there is a regionwhere the sacrificial layer 120 is not present in the display region 42,for example the uniformity in the quality (surface property) of thedisplay panel to be obtained may be reduced. Specifically, in laserlight irradiation to be described later, laser light may directly act onthe base material 70 in the region where the sacrificial layer 120 isnot present. Asa result, the surface of the base material 70 mayberoughened in the region where the sacrificial layer 120 is not present,compared to a region where the sacrificial layer 120 is present. Thedifference in surface roughness can be observed by, for example, SEMobservation.

The sacrificial layer 120 is formed of a material that can absorb laserlight to be described later. The laser light transmittance of thesacrificial layer 120 is typically from 0% to 99%. As the formingmaterial of the sacrificial layer 120, for example, silicon nitride(SiN_(y)), silicon oxide (SiO_(x)), a complex of SiN_(y) and SiO_(x),silicon, metal, or the like is used. By appropriately selecting theforming material or thickness, it is possible to form the sacrificiallayer 120 satisfying a desired transmittance or the close adhesion stateto the base material 70 after laser light irradiation to be describedlater. The transmittance of the sacrificial layer 120 or the closeadhesion state thereof to the base material 70 after laser lightirradiation is adjusted according to, for example, the forming region ofthe sacrificial layer 120. Specifically, in the embodiment in which thesacrificial layer 120 is formed so as to cover the display region 42,for example, the close adhesion state of the sacrificial layer 120 andthe base material 70 after laser light irradiation to be described lateris adjusted to such an extent that the sacrificial layer 120 and thebase material 70 are not completely peeled from each other.Specifically, the sacrificial layer 120 is formed of silicon nitride(SiN_(y)) with a laser light transmittance of 70% to 99%, and thesurface of the base material 70 can be directly ablated by laser lightirradiation.

Next, as shown in FIG. 4B, the base material 70 including the displayregion 42, the frame region 44, and the component mounting region 46 isformed on the glass substrate 200. Specifically, the forming material(e.g., a resin composition) of the base material 70 is applied on theglass substrate 200 on the side on which the sacrificial layer 120 isformed, and the forming material is subjected to various treatments suchas heating as necessary, so that the base material 70 having a desiredthickness (e.g., approximately 20 μm) is formed. As the applying methodof forming material of the base material 70, a publicly known methodsuch as a spin-coating method can be employed.

In the embodiment, a region where the base material 70 and the glasssubstrate 200 are in contact with each other is present at the edge side200 a and the edge side 200 b. In this manner, a place where thesacrificial layer 120 is missing is present at the outer edge of thebase material 70 (the sacrificial layer 120 is not formed in a frameshape corresponding to the outer edge of the base material 70), andtherefore, the missing portion can function as an escape hole of gasgenerated from the base material 70 by laser light irradiation to bedescribed later. As a result, for example, the degradation of thequality of the display panel to be obtained can be prevented.

Next, as shown in FIG. 4C, the circuit layer 74 including the TFT 72,the planarization film 96, the passivation film 98, the OLED 6, and thesealing layer 106 are formed in this order on the base material 70 toform the upper structure layer 108, and thereafter, the protective film114 (e.g., a resin film such as a PET film) is stacked on the upperstructure layer 108 using an adhesive. The frame region 44 differs fromthe display region 42 in that, for example, the frame region 44 does notinclude the TFT 72 and the OLED 6.

Next, as shown in FIG. 4D, the glass substrate 200 is peeled from thebase material 70. Here, the sacrificial layer 120 adheres to the glasssubstrate 200 side. Unlike the example shown in the drawing, the glasssubstrate 200 maybe peeled before the protective film 114 is stacked onthe upper structure layer 108.

The glass substrate 200 is peeled by, for example, irradiation withlaser light (e.g., using an excimer laser) to reduce the adhesionproperty between the glass substrate 200 and the base material 70. Forexample, laser light having a proper wavelength is selected according tothe material (materials) of the substrate and/or the base material.Specifically, laser light having a wavelength that transmits through thesubstrate (substantially a transmittance 100%) and can reduce theadhesion property between the substrate and the base material isselected. Moreover, by properly selecting laser light, it is possible tocontrol the transmittance of the sacrificial layer 120 or the closeadhesion state thereof to the base material 70 after laser lightirradiation.

Laser light irradiation is performed by scanning with a laser lightsource from the side of the glass substrate 200 on which the basematerial 70 (the sacrificial layer 120) is not formed. For example, alaser light source corresponding to the long edge side of the displayregion is caused to perform scanning along the direction of arrow shownin FIG. 5A.

FIG. 5B is a diagram showing one example of a cross section along lineI-I in FIG. 5A after laser light irradiation. After laser lightirradiation, the force of adhesion between the glass substrate 200 andthe base material 70 is reduced in the region where the sacrificiallayer 120 is not formed, and the glass substrate 200 is peeled from thebase material 70. On the other hand, in the region where the sacrificiallayer 120 is formed, the glass substrate 200 is in a state of closelyadhering partially to the base material 70 (low close-adhesion state).Hence, the glass substrate 200 canbemechanicallypeeled from the basematerial 70 by cramping and pulling the both edge portions of the basematerial 70 located on the two opposing edge sides 200 a and 200 b ofthe glass substrate 200 and peeled from the glass substrate 200. In thismanner, the glass substrate 200 partially adheres to the base material70 immediately after laser irradiation, and therefore, the falling ofthe glass substrate 200 is prevented. Moreover, the glass substrate 200can be peeled at proper timing, and therefore, the conveyability of thedisplay panel immediately after laser irradiation can also be ensured.As a result, damage to the display panel or the adherence of a foreignsubstance thereto can be suppressed, and the display panel withexcellent quality can be obtained.

In the display panel obtained by peeling the glass substrate 200, anarea whose surface is rougher than that of the other area is formed atthe opposing short edge sides on a major surface of the base material 70on the side on which the upper structure layer 108 is not formed.

FIG. 6 is a plan view showing the forming region of a sacrificial layerin a second embodiment of the invention. In the second embodiment, anorganic EL display device is manufactured in the same manner as in thefirst embodiment, except that the forming region of the sacrificiallayer is changed.

In the second embodiment, the sacrificial layer 120 is formed at an edgeportion (a region corresponding to the component mounting region 46) ofthe rectangular glass substrate 200 on the component mounting region 46side and an edge portion on the side opposite to the component mountingregion 46, while the sacrificial layer 120 is not formed in a regioncorresponding to the display region 42. The sacrificial layer 120 isformed spaced apart from an edge 200 c of the glass substrate 200 at theedge portion on the side opposite to the component mounting region 46.Specifically, a first region 201 where the base material 70 and theglass substrate 200 are in contact with each other, a region where thesacrificial layer 120 is present, and a second region 202 where the basematerial 70 and the glass substrate 200 are in contact with each otherare disposed in this order from the edge of the base material 70. Byforming the first region 201, the edge portion of the base material 70can be cramped after laser light irradiation in the same manner as inthe first embodiment. In the example shown in the drawing, the secondregion 202 includes the display region 42, and the sacrificial layer 120is disposed spaced apart from the display region 42. However, thesacrificial layer 120 may be disposed adjacent to the display region 42.Here, it is preferable that a part of the sacrificial layer 120 does notoverlap the display region 42. This is because if the sacrificial layer120 is present in the display region 42, for example the uniformity inthe quality (surface property) of the display panel to be obtained maybe reduced.

When the sacrificial layer 120 is not disposed in the display region 42as in the embodiment, it is preferable, as shown in the drawing, to formthe sacrificial layer 120 along a direction crossing the peelingdirection (the direction of arrow shown in FIG. 6) of the base material70 (display panel). It is further preferable to form the sacrificiallayer 120 in a direction substantially orthogonal to the peelingdirection. This is because if the sacrificial layer 120 is formed alongthe peeling direction, cracks may occur in the display region 42 inpeeling. In the example shown in the drawing, the sacrificial layer 120is continuously formed in the short-edge-side direction of therectangular glass substrate 200. However, the sacrificial layer 120 maybe intermittently formed.

Also in the embodiment, any proper configuration that can absorb laserlight can be employed for the sacrificial layer 120. For example, thesacrificial layer 120 is formed of amorphous silicon. In this case, thesacrificial layer 120 can absorb almost laser light (transmittance beingsubstantially 0%). Amorphous silicon generates heat by laser lightirradiation, is crystallized with the heat, and can expand in volume. Asa result, the low close-adhesion state in which the base material 70 ispartially peeled from the sacrificial layer 120 can be obtained.

In the embodiment, in the display panel obtained by peeling the glasssubstrate 200, an area whose surface is rougher than that of the otherarea is formed so as to cover the display region 42 on a major surfaceof the base material 70 on the side on which the upper structure layer108 is not formed.

FIG. 7 is a plan view showing the forming region of a sacrificial layerin a third embodiment of the invention. In the third embodiment, anorganic EL display device is manufactured in the same manner as in thefirst embodiment, except that the forming region of the sacrificiallayer is changed.

In the third embodiment, the sacrificial layer 120 is formed at twoopposing edge sides (long edge sides) 200 e and 200 f of the rectangularglass substrate 200, while the sacrificial layer 120 is not disposed inthe display region 42. The sacrificial layer 120 is formed so as to havea predetermined width from the edge of the glass substrate 200. In thismanner, the sacrificial layer 120 is disposed at least apart (long edgeside) of the outer edge of the base material 70. In the example shown inthe drawing, the sacrificial layer 120 is formed spaced apart from aregion corresponding to the display region 42. Specifically, a thirdregion 203 where the base material 70 and the glass substrate 200 are incontact with each other is disposed between the display region 42 andthe sacrificial layer 120. In the example shown in the drawing, thesacrificial layer 120 is continuously formed in the long-edge-sidedirection of the rectangular glass substrate 200. However, thesacrificial layer 120 may be intermittently formed.

Also when the sacrificial layer 120 is not disposed in the displayregion 42 as in the embodiment, any proper form that can absorb laserlight can be employed for the sacrificial layer 120. For example, thesacrificial layer 120 is composed of a metal layer containing metal. Inthis case, the sacrificial layer 120 does not transmit laser light(transmittance being substantially 0%), and thus the adhesion propertybetween the base material 70 and the sacrificial layer 120 cannot begreatly changed by laser light irradiation. Therefore, after the edgeportion at which the sacrificial layer 120 is formed is removed bycutting (e.g., cutting by laser light irradiation) after laser lightirradiation, the glass substrate 200 and the base material 70 can beeasily separated by picking up or the like.

The invention is not limited to the embodiments, but variousmodifications can be made. For example, the configuration shown in theembodiments may be replaced with substantially the same configuration, aconfiguration providing the same operational effect, or a configurationcapable of achieving the same object. For example, instead of a form inwhich the substrate is peeled after being divided into individual panels(single pieces) as in the embodiment, a form in which the substrate ispeeled from the base material before singulation may be employed.

Various altered and modified examples within the range of the idea ofthe invention will occur to those skilled in the art, and it isunderstood that the altered and modified examples also belong to thescope of the invention. For example, when those skilled in the artappropriately add or remove components or change the designs ofcomponents in the embodiments described above, or add or omit processesor change the conditions of processes in the embodiments describedabove, such variations are included in the scope of the invention aslong as they include the spirit of the invention.

What is claimed is:
 1. A flexible device comprising: a flexible basematerial including a first surface and a second surface opposite to thefirst surface; and a thin film transistor on the first surface, whereinthe second surface has a first area and a second area, the secondsurface of the second area is rougher than the second surface of thefirst area.
 2. The flexible device according to claim 1, wherein theflexible base material includes a first outermost edge and a secondoutermost edge, the first outermost edge is not an extension of thesecond outermost edge, and the first outermost edge and the secondoutermost edge are at the first area.
 3. The flexible device accordingto claim 2, wherein the first outermost edge and the second outermostedge are straight
 4. The flexible device according to claim 1, furthercomprising a display region and a frame region surrounding the displayregion, wherein the first area overlaps the frame region in a plan view.5. The flexible device according to claim 4, wherein the second areaoverlaps the display region in a plan view.
 6. The flexible deviceaccording to claim 4, further comprising a component mounting region,wherein the first area overlaps the component mounting region in a planview.
 7. The flexible device according to claim 6, wherein the componentmounting region is in the frame region.
 8. The flexible device accordingto claim 1, further comprising a display region and a frame regionsurrounding the display region, wherein the first area overlaps thedisplay region in a plan view.
 9. The flexible device according to claim8, wherein the display region is between the first outermost edge andthe second outermost edge.
 10. The flexible device according to claim 8,wherein the second area overlaps the frame region in a plan view. 11.The flexible device according to claim 8, further comprising a componentmounting region, wherein the first area overlaps the component mountingregion in a plan view
 12. The flexible device according to claim 1,wherein the second surface has a third area separating apart from thefirst area, and the second surface of the second area is rougher thanthe third surface of the second area.
 13. The flexible device accordingto claim 1, wherein the second surface has a fourth area separatingapart from the second area, and the second surface of the fourth area isrougher than the second surface of the first area.